Applications of Metal - Insulator - Metal ( MIM ) Capacitors International SEMATECH

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  • Dan McGowan
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Study of Lanthanum incorporated HfO2 nano-scale high-κ dielectric using Pulse Laser Deposition for metal–insulator–metal capacitor applications

Studies of Metal–insulator–metal (MIM) capacitors having high-κ La2O3\HfO2 dielectric stacks are fabricated using Pulse Laser Deposition (PLD) is carried out. Nano-sized La2O3\HfO2 dielectric stacks are deposited using PLD system under optimized pressure, substrate temperature and numbers of shots inside argon ambient chamber. The morphology of dielectric stacks is examined using AFM and the th...

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The Effect of Different Dielectric Materials in Designing High Performance Metal-Insulator-Metal (MIM) Capacitors

Received Jan 24, 2017 Revised Mar 30, 2017 Accepted Apr 15, 2017 A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM ca...

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DC and RF Characteristics of Advanced MIM Capacitors for MMIC’s Using Ultra-Thin Remote-PECVD Si N Dielectric Layers

We have fabricated advanced metal–insulator–metal (MIM) capacitors with ultra-thin (200 Å) remote-PECVD Si3N4 dielectric layers having excellent electrical properties. The breakdown field strength of MIM capacitors with 200-Å-thick Si3N4 was larger than 3.5 MV/cm, which indicates the excellent quality of the deposited Si3N4 film. The main capacitance per unit area extracted by radio frequency (...

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Metal-layer capacitors in the 65 nm CMOS process and the application for low-leakage power-rail ESD clamp circuit

Between the metal–insulator–metal (MIM) capacitor and metal–oxide–metal (MOM) capacitor, the MIM capacitor has a better characteristic of stable capacitance. However, the MOM capacitors can be easily realized through the metal interconnections, which does not need additional fabrication masks into the process. Moreover, the capacitance density of the MOM capacitor can exceed the MIM capacitor w...

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Study of Lanthanum incorporated HfO2 nano-scale high-κ dielectric using Dense Plasma Focus for metal–insulator–metal capacitor applications

Metal–insulator–metal (MIM) capacitors have been fabricated using high-κ La2O3\HfO2 dielectric stacks deposited using Dense Plasma Focus (DPF) and were subsequently studied. DPF is a unique machine used for the very first time to fabricate dielectric stacks within a MIM structure as it can be used both to deposit nano-size thin film as well as can also be used to change the properties of the po...

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تاریخ انتشار 2000